Floating Gate Nonvolatile Memory Using Individually Cladded Monodispersed Quantum Dots

A Study On The Nanocrystal Floating-gate Nonvolatile Memory

Quantum Dot (QD) gate Si-FETs with Self-Assembled GeOX Cladded Germanium Quantum Dots

This paper presents preliminary data on the transfer and output characteristics of a GeOXcladded Ge quantum dot (QD) gate Si MOSFET. The MOSFET is formed by depositing cladded QDs above the SiO2 gate insulator formed on pSi region, sandwiched between n-type source and drain. Ge (~ 2 to 8 nm) nanoparticles, cladded with GeOX (~1nm) layers, are deposited using site-specific self-assembly. In addi...

Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

This letter describes the fabrication and structural and electrical characterization of an aerosol-nanocrystal-based floating-gate field-effect-transistor nonvolatile memory. Aerosol nanocrystal nonvolatile memory devices demonstrate program/erase characteristics comparable to conventional stacked-gate nonvolatile memory devices. Aerosol nanocrystal devices with 0.2 mm channel lengths exhibit l...

Radiation Effects on Floating-Gate Memory Cells

We have addressed the problem of threshold voltage ( TH) variation in flash memory cells after heavy-ion irradiation by using specially designed array structures and test instruments. After irradiation, low TH tails appear in TH distributions, growing with ion linear energy transfer (LET) and fluence. In particular, high LET ions, such as iodine used in this paper, can produce a bit flip. Since...

Nonvolatile memory disturbs due to gate and junction leakage currents

We address disturbs due to gate oxide and junction leakage currents in floating gate nonvolatile memories (NVM). The junction leakage is important, because the gate oxide current is proportional to junction current. We find the low gate leakage current to be caused by field ionization (FI) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge accumulati...